P-Channel MOSFET featuring -20V Drain to Source Breakdown Voltage and 2.7A Continuous Drain Current. This single element, surface mount device offers a low 134mR Rds On (Max) at 1.5V specified gate voltage. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 1.3W. The thin WL-CSP package measures 0.8mm x 0.8mm x 0.15mm, ideal for compact designs.
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Onsemi FDZ663P technical specifications.
General
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 134mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.15mm |
| Input Capacitance | 525pF |
| Lead Free | Lead Free |
| Length | 0.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 134mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 4.8ns |
| Weight | 0.067g |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDZ663P Datasheet
Download the complete datasheet for Onsemi FDZ663P to view detailed technical specifications.
No datasheet is available for this part.