NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 40V Collector-Emitter Voltage (VCEO) and 500mA Max Collector Current. Offers a 300MHz Gain Bandwidth Product and 300mW Power Dissipation. Packaged in a surface-mount SC case, this RoHS compliant component is supplied on a 3000-piece tape and reel.
Frequency300MHz
PackageSC
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Onsemi FFB2222A technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
40V
Max Collector Current
500mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FFB2222A Datasheet
Download the complete datasheet for Onsemi FFB2222A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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