NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification. Features a 160V collector-emitter breakdown voltage and 200mA maximum collector current. Offers a 300MHz transition frequency and 80 minimum hFE. Packaged in a surface-mount SC case, this component is lead-free and RoHS compliant, supplied on a 3000-piece tape and reel. Operates within a temperature range of -55°C to 150°C with a 200mW power dissipation.
Frequency300MHz
PackageSC
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Onsemi FFB5551 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FFB5551 Datasheet
Download the complete datasheet for Onsemi FFB5551 to view detailed technical specifications.
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