N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-3P package. Features a maximum collector-emitter voltage of 1400V and a continuous collector current of 40A. Offers a maximum power dissipation of 272000mW and a typical collector-emitter saturation voltage of 1.9V. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-3P
MountingThrough Hole
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Technical Specifications
Onsemi FGA20S140P technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.2(Max) |
| Package Width (mm) | 5(Max) |
| Package Height (mm) | 18.9(Max) |
| Seated Plane Height (mm) | 23.8(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 1400V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Continuous Collector Current | 40A |
| Maximum Power Dissipation | 272000mW |
| Typical Collector Emitter Saturation Voltage | 1.9V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi FGA20S140P Datasheet
Download the complete datasheet for Onsemi FGA20S140P to view detailed technical specifications.
No datasheet is available for this part.