N-channel Insulated Gate Bipolar Transistor (IGBT) for high-voltage applications. Features a 1200V Collector Emitter Breakdown Voltage and a 50A continuous collector current. Offers a low 2V Collector Emitter Saturation Voltage and 312W maximum power dissipation. Designed for through-hole mounting in a 3-pin TO-3PN package, this RoHS compliant component operates from -55°C to 150°C.
Current Rating50A
MountingThrough Hole
Power312W
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Technical Specifications
Onsemi FGA25N120ANTDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.65V |
| Continuous Collector Current | 25A |
| Current Rating | 50A |
| Height | 18.9mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 312W |
| Radiation Hardening | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 50ns |
| DC Rated Voltage | 1.2kV |
| Weight | 0.225789oz |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA25N120ANTDTU Datasheet
Download the complete datasheet for Onsemi FGA25N120ANTDTU to view detailed technical specifications.
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