N-channel Insulated Gate Bipolar Transistor (IGBT) for high-voltage applications. Features a 1200V Collector Emitter Breakdown Voltage and a 50A continuous collector current. Offers a low 2V Collector Emitter Saturation Voltage and 312W maximum power dissipation. Designed for through-hole mounting in a 3-pin TO-3PN package, this RoHS compliant component operates from -55°C to 150°C.
Current Rating50A
MountingThrough Hole
Power312W
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Technical Specifications
Onsemi FGA25N120ANTDTU technical specifications.
General
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.65V
Continuous Collector Current
25A
Current Rating
50A
Height
18.9mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.8mm
Max Collector Current
50A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
312W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
312W
Radiation Hardening
No
Reverse Recovery Time
350ns
RoHS Compliant
Yes
Turn-Off Delay Time
190ns
Turn-On Delay Time
50ns
DC Rated Voltage
1.2kV
Weight
0.225789oz
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGA25N120ANTDTU Datasheet
Download the complete datasheet for Onsemi FGA25N120ANTDTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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