The FGA30S120P is a 1.3kV insulated gate bipolar transistor with a maximum collector current of 60A and a maximum power dissipation of 348W. It is packaged in a FLANGE MOUNT, R-PSFM-T3 package and is available in quantities of 30. The device is RoHS compliant and has a weight of 6.401g. The FGA30S120P operates over a temperature range of -55°C to 175°C.
MountingThrough Hole
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Technical Specifications
Onsemi FGA30S120P technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.3kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 15.8mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 348W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA30S120P Datasheet
Download the complete datasheet for Onsemi FGA30S120P to view detailed technical specifications.
No datasheet is available for this part.
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