The FGA40N60UFDTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 40A. It has a maximum power dissipation of 160W and is packaged in a through-hole package. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The FGA40N60UFDTU is manufactured by Onsemi and is available in quantities of 30 per rail/Tube packaging.
Current Rating40A
MountingThrough Hole
Power160W
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Technical Specifications
Onsemi FGA40N60UFDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 3.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 40A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 160W |
| Reverse Recovery Time | 95ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA40N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGA40N60UFDTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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