The FGA50N100BNTD2 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1kV and a maximum collector current of 50A. It is designed for through-hole mounting in a flange mount package with a maximum power dissipation of 156W. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
MountingThrough Hole
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Technical Specifications
Onsemi FGA50N100BNTD2 technical specifications.
General
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 2.9V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 15.8mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 75ns |
| RoHS Compliant | Yes |
| Series | FGA50N100BNTD2 |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA50N100BNTD2 Datasheet
Download the complete datasheet for Onsemi FGA50N100BNTD2 to view detailed technical specifications.
No datasheet is available for this part.