The FGA50S110P is an insulated gate bipolar transistor from Onsemi with a collector-emitter breakdown voltage of 1.1kV and a maximum collector current of 50A. It has a maximum power dissipation of 300W and operates over a temperature range of -55°C to 175°C. The device is packaged in a FLANGE MOUNT, R-PSFM-T3 package and is available in quantities of 30 per rail/tube. The FGA50S110P is compliant with RoHS regulations and is not radiation hardened.
MountingThrough Hole
Power300W
Quick Jump:
Technical Specifications
Onsemi FGA50S110P technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.1kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 2.6V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 15.8mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FGA50S110P |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA50S110P Datasheet
Download the complete datasheet for Onsemi FGA50S110P to view detailed technical specifications.
No datasheet is available for this part.
Product Images
