The FGA60N60UFDTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 120A. It has a maximum power dissipation of 298W and is packaged in a flange mount with a width of 5mm. The transistor is designed for through hole mounting and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and not radiation hardened.
MountingThrough Hole
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Technical Specifications
Onsemi FGA60N60UFDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 15.8mm |
| Max Collector Current | 120A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 47ns |
| RoHS Compliant | Yes |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA60N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGA60N60UFDTU to view detailed technical specifications.
No datasheet is available for this part.