The FGA70N30TTU is a high-power insulated gate bipolar transistor from Onsemi. It features a collector-emitter breakdown voltage of 300V and can operate at temperatures up to 150°C. With a maximum power dissipation of 201W, this IGBT is suitable for demanding applications. The device is mounted through a hole and is packaged in a rail or tube configuration, making it easy to integrate into designs. The FGA70N30TTU is compliant with RoHS regulations, ensuring environmental responsibility.
MountingThrough Hole
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Technical Specifications
Onsemi FGA70N30TTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 1.5V |
| Input Type | STANDARD |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 201W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | FGA70N30T |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA70N30TTU Datasheet
Download the complete datasheet for Onsemi FGA70N30TTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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