N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for automotive applications. Features a maximum operating voltage of 450V and a continuous drain current of 23A. Operates within a temperature range of -40°C to 175°C. Packaged in a 3-pin DPAK (TO-252AA) with a single terminal position and one element.
Onsemi FGD3245G2-F085 technical specifications.
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