High-speed Field Stop Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and a maximum collector current of 40A. Features a low collector-emitter saturation voltage of 2.8V and a maximum power dissipation of 165W. Packaged in a TO-247AB through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a reverse recovery time of 34ns and turn-on delay of 13ns.
PackageTO-247AB
MountingThrough Hole
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Technical Specifications
Onsemi FGH20N60SFDTU technical specifications.
General
| Package/Case | TO-247AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 34ns |
| RoHS Compliant | Yes |
| Series | FGH20N60 |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 13ns |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH20N60SFDTU Datasheet
Download the complete datasheet for Onsemi FGH20N60SFDTU to view detailed technical specifications.
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