N-channel Insulated Gate Bipolar Transistor (IGBT) chip for high-power applications. Features a 600V collector-emitter breakdown voltage and a maximum collector current of 80A. Offers a low collector-emitter saturation voltage of 1.9V and a maximum power dissipation of 349W. Packaged in a TO-247 case with through-hole mounting, operating from -55°C to 175°C. Includes fast switching characteristics with a turn-on delay of 12ns and turn-off delay of 92ns.
PackageTO-247
MountingThrough Hole
Power349W
Quick Jump:
Technical Specifications
Onsemi FGH40N60SMDF technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Height
20.6mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.6mm
Max Collector Current
80A
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
349W
Mount
Through Hole
Package Quantity
150
Packaging
Rail/Tube
Power Dissipation
349W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
90ns
RoHS Compliant
Yes
Turn-Off Delay Time
92ns
Turn-On Delay Time
12ns
Weight
6.39g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGH40N60SMDF Datasheet
Download the complete datasheet for Onsemi FGH40N60SMDF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
