The FGH40T100SMD is a TO-247 flange mount insulated gate bipolar transistor with a collector emitter breakdown voltage of 1kV and a maximum collector current of 80A. It has a maximum power dissipation of 333W and operates over a temperature range of -55°C to 175°C. The device is lead free and RoHS compliant, packaged in a rail/tube package with 30 units per package.
PackageTO-247
MountingThrough Hole
Power333W
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Technical Specifications
Onsemi FGH40T100SMD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 333W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 333W |
| Radiation Hardening | No |
| Reverse Recovery Time | 78ns |
| RoHS Compliant | Yes |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH40T100SMD Datasheet
Download the complete datasheet for Onsemi FGH40T100SMD to view detailed technical specifications.
No datasheet is available for this part.
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