Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and a maximum Collector Current of 60A. Features a low Collector Emitter Saturation Voltage of 2.4V and a fast Turn-On Delay Time of 23ns. Packaged in a TO-247AB through-hole mount with a maximum power dissipation of 298W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-247AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi FGH60N60UFDTU technical specifications.
General
| Package/Case | TO-247AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 47ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 23ns |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH60N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGH60N60UFDTU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
