High-performance Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage. Features a maximum collector current of 80A and a low collector-emitter saturation voltage of 2.4V. Designed for through-hole mounting in a TO-247-3 package, offering a maximum power dissipation of 290W. Operates across a wide temperature range from -55°C to 150°C, with a reverse recovery time of 61ns. RoHS compliant and supplied in rail/tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Onsemi FGH80N60FD2TU technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 20.82mm |
| Input Type | STANDARD |
| Length | 15.87mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 61ns |
| RoHS Compliant | Yes |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH80N60FD2TU Datasheet
Download the complete datasheet for Onsemi FGH80N60FD2TU to view detailed technical specifications.
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