Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 80A. This through-hole mounted component offers a low collector-emitter saturation voltage of 2.4V and a maximum power dissipation of 290W. Operating within a temperature range of -55°C to 150°C, it boasts a reverse recovery time of 36ns and a turn-on delay of 21ns. Packaged in a TO-247 case, this RoHS compliant device is supplied in a rail/tube format.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi FGH80N60FDTU technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 36ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 126ns |
| Turn-On Delay Time | 21ns |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH80N60FDTU Datasheet
Download the complete datasheet for Onsemi FGH80N60FDTU to view detailed technical specifications.
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