The FGI40N60SFTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It has a maximum power dissipation of 290W and is packaged in a TO-262-3 package, suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is part of the FGI40N60 series from Onsemi.
PackageTO-262-3
MountingThrough Hole
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Technical Specifications
Onsemi FGI40N60SFTU technical specifications.
General
| Package/Case | TO-262-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.9V |
| Input Type | STANDARD |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | FGI40N60 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGI40N60SFTU Datasheet
Download the complete datasheet for Onsemi FGI40N60SFTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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