The FGL35N120FTDTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 70A. It is packaged in a TO-264 case and is designed for through hole mounting. The transistor has a maximum power dissipation of 368W and operates over a temperature range of -55°C to 150°C. It is lead free and RoHS compliant.
PackageTO-264
MountingThrough Hole
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Technical Specifications
Onsemi FGL35N120FTDTU technical specifications.
General
| Package/Case | TO-264 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Height | 26.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 20.2mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 368W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 337ns |
| RoHS Compliant | Yes |
| Weight | 6.756g |
| Width | 5.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGL35N120FTDTU Datasheet
Download the complete datasheet for Onsemi FGL35N120FTDTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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