N-channel Insulated Gate Bipolar Transistor (IGBT) chip for high-power applications. Features a 1kV Collector-Emitter Voltage (VCEO) and a 60A maximum collector current. With a 180W power dissipation and a low 1.5V Collector Emitter Saturation Voltage, this device is designed for efficient operation. Packaged in a TO-264-3 through-hole mount, it offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-264-3
Current Rating60A
MountingThrough Hole
Power180W
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Technical Specifications
Onsemi FGL60N100BNTD technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 2.9V |
| Current Rating | 60A |
| Height | 26mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 20mm |
| Max Breakdown Voltage | 1kV |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 1.2us |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1kV |
| Weight | 6.756g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGL60N100BNTD Datasheet
Download the complete datasheet for Onsemi FGL60N100BNTD to view detailed technical specifications.
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