The FGP20N6S2 is a 600V insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 2.2V. It can handle a maximum collector current of 28A and a maximum power dissipation of 125W. The device is packaged in a TO-220-3 case and is designed for through-hole mounting. The FGP20N6S2 operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-220-3
Current Rating28A
MountingThrough Hole
Power125W
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Technical Specifications
Onsemi FGP20N6S2 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 28A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 28A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGP20N6S2 Datasheet
Download the complete datasheet for Onsemi FGP20N6S2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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