The FGP7N60RUFDTU is a 600V insulated gate bipolar transistor with a maximum collector current of 14A. It is packaged in a TO-220-3 case and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Onsemi FGP7N60RUFDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 600V |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | FGP5N60 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGP7N60RUFDTU Datasheet
Download the complete datasheet for Onsemi FGP7N60RUFDTU to view detailed technical specifications.
No datasheet is available for this part.