The FGPF120N30TU is an insulated gate bipolar transistor (IGBT) from Onsemi, packaged in a TO-220-3 case and available in quantities of 50. It features a collector-emitter breakdown voltage of 300V and a maximum collector current of 120A. The device is designed to operate within a temperature range of -55°C to 150°C and has a maximum power dissipation of 60W. The FGPF120N30TU is RoHS compliant and suitable for use in a variety of applications.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Onsemi FGPF120N30TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1.4V |
| Input Type | STANDARD |
| Max Collector Current | 120A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGPF120N30TU Datasheet
Download the complete datasheet for Onsemi FGPF120N30TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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