The FGPF30N30TDTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 300V and a maximum power dissipation of 44.6W. It is packaged in a TO-220-3 package and is designed for through-hole mounting. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The device features a reverse recovery time of 22ns and is part of the FGPF30N30 series.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Onsemi FGPF30N30TDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1.5V |
| Input Type | STANDARD |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44.6W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | FGPF30N30 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGPF30N30TDTU Datasheet
Download the complete datasheet for Onsemi FGPF30N30TDTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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