The FGPF50N30TTU is a 300V insulated gate bipolar transistor with a maximum power dissipation of 46.8W. It is packaged in a RoHS compliant TO-220F package with 3 pins. The transistor operates over a temperature range of -55°C to 150°C. It is suitable for use in a variety of applications including power supplies and motor control circuits.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Onsemi FGPF50N30TTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1.5V |
| Input Type | STANDARD |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FGPF50N30 |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGPF50N30TTU Datasheet
Download the complete datasheet for Onsemi FGPF50N30TTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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