The FGPF50N33BTTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 330V and a maximum collector current of 50A. It is packaged in a TO-220-3 flange mount and is suitable for high-power applications. The transistor has a maximum power dissipation of 43W and can operate over a temperature range of -55°C to 150°C. It is lead-free and RoHS compliant, making it suitable for use in a variety of industrial and commercial applications.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Onsemi FGPF50N33BTTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 330V |
| Collector Emitter Voltage (VCEO) | 330V |
| Collector-emitter Voltage-Max | 1.5V |
| Height | 16.07mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FGPF50N33 |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.080072oz |
| Width | 2.74mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGPF50N33BTTU Datasheet
Download the complete datasheet for Onsemi FGPF50N33BTTU to view detailed technical specifications.
No datasheet is available for this part.