Onsemi
FH105A-TR-E
NPN RF Transistor, 8GHz Transition Frequency, SC Package, 300mW Max Power Dissipation
The FH105A-TR-E is a NPN RF transistor with a transition frequency of 8GHz. It features a maximum power dissipation of 300mW and is packaged in a SC package. The transistor has a maximum collector current of 30mA and is RoHS compliant. It operates within a temperature range of -55°C to 150°C.
PackageSC
PolarityNPN
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Technical Specifications
Onsemi FH105A-TR-E technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector-emitter Voltage-Max | 10V |
| Emitter Base Voltage (VEBO) | 1.5V |
| Gain | 10dB |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FH105A-TR-E Datasheet
Download the complete datasheet for Onsemi FH105A-TR-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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