The FJAF6806DTU is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 750V and a maximum collector current of 6A. It has a maximum power dissipation of 50W and is packaged in a SC package for through-hole mounting. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is manufactured by Onsemi and is available in a quantity of 30 per rail/Tube packaging.
PackageSC
Current Rating6A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJAF6806DTU technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 750V |
| Collector Emitter Voltage (VCEO) | 750V |
| Collector-emitter Voltage-Max | 5V |
| Continuous Collector Current | 6A |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 4 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 750V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJAF6806DTU Datasheet
Download the complete datasheet for Onsemi FJAF6806DTU to view detailed technical specifications.
No datasheet is available for this part.