NPN Silicon Power Bipolar Junction Transistor (BJT) with a 10A maximum collector current and 750V collector-emitter breakdown voltage. Features a 3V collector-emitter saturation voltage and 1.5kV collector-base voltage. This through-hole component is housed in a 3-pin SC package, offering a 60W maximum power dissipation and operating temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageSC
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJAF6810ATU technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 750V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 750V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 5 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 750V |
| Weight | 0.245577oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJAF6810ATU Datasheet
Download the complete datasheet for Onsemi FJAF6810ATU to view detailed technical specifications.
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