NPN Silicon Power Bipolar Junction Transistor (BJT) with a continuous collector current of 10A and a collector-emitter breakdown voltage of 750V. Features a maximum collector-emitter voltage of 750V, a maximum power dissipation of 60W, and a minimum hFE of 5. Housed in a 3-pin SC package for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
PackageSC
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJAF6810DTU technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 750V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 750V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 10A |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 16.7mm |
| hFE Min | 5 |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 750V |
| Weight | 0.245577oz |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJAF6810DTU Datasheet
Download the complete datasheet for Onsemi FJAF6810DTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.