NPN Power Bipolar Junction Transistor (BJT) designed for high voltage applications. Features a maximum collector current of 12A and a collector-emitter breakdown voltage of 800V, with a collector base voltage of 1.7kV. Offers a low collector-emitter saturation voltage of 250mV and a transition frequency of 15MHz. This through-hole mounted component operates within a temperature range of -55°C to 125°C and is RoHS compliant.
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJAFS1720TU technical specifications.
General
| Collector Base Voltage (VCBO) | 1.7kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 15MHz |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.7mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | ESBC™ |
| Transition Frequency | 15MHz |
| Weight | 0.245577oz |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJAFS1720TU Datasheet
Download the complete datasheet for Onsemi FJAFS1720TU to view detailed technical specifications.
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