
PNP Bipolar Junction Transistor (BJT) in SOT-89 package. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 3A. Offers a minimum hFE of 80 and a collector-emitter saturation voltage of -450mV. Operates across a temperature range of -55°C to 150°C with 500mW power dissipation. Surface mountable and supplied on tape and reel.
Onsemi FJC1308PTF technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -450mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 450mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Series | FJC1308 |
| DC Rated Voltage | -30V |
| Weight | 0.1305g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJC1308PTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
