PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter breakdown voltage and a maximum collector current of 5A. Offers a minimum DC current gain (hFE) of 80. Operates within a temperature range of -55°C to 150°C with a power dissipation of 500mW. Packaged in SOT-89 for tape and reel distribution.
PackageSOT-89
Current Rating-5A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJC1386QTF technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Series | FJC1386 |
| DC Rated Voltage | -20V |
| Weight | 0.1305g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJC1386QTF Datasheet
Download the complete datasheet for Onsemi FJC1386QTF to view detailed technical specifications.
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