PNP Bipolar Junction Transistor (BJT) in a SOT-89 surface mount package. Features a 20V collector-emitter breakdown voltage and a maximum collector current of 5A. Offers a minimum hFE of 80 and a collector-emitter saturation voltage of -1V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. This lead-free, RoHS compliant component is supplied on tape and reel.
Onsemi FJC1386RTF technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Series | FJC1386 |
| DC Rated Voltage | -20V |
| Weight | 0.1305g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJC1386RTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
