NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-89 package. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 3A. Offers a minimum DC current gain (hFE) of 120 and a low collector-emitter saturation voltage of 450mV. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 500mW. This lead-free and RoHS compliant component is supplied on tape and reel.
PackageSOT-89
Current Rating3A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJC1963RTF technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 450mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 450mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Series | FJC1963 |
| DC Rated Voltage | 30V |
| Weight | 0.1305g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJC1963RTF Datasheet
Download the complete datasheet for Onsemi FJC1963RTF to view detailed technical specifications.
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