
NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-89 package. Features a 160V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a transition frequency of 100MHz and a minimum DC current gain (hFE) of 100. Operates across a temperature range of -55°C to 150°C with a power dissipation of 500mW. This lead-free and RoHS compliant component is supplied on tape and reel.
Onsemi FJC2383YTF technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 160V |
| Weight | 0.1305g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJC2383YTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
