The FJD5304DTM is a high-power NPN transistor from Onsemi, featuring a maximum collector-emitter voltage of 400V and a maximum collector current of 4A. It is packaged in a DPAK case and is suitable for operation over a temperature range of -55°C to 150°C. With a maximum power dissipation of 30W, this transistor is designed for high-current applications. It is available in quantities of 2500 units per reel.
PackageDPAK
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi FJD5304DTM technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 700V |
| Collector-emitter Voltage-Max | 400V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10 |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Series | FJD5304 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJD5304DTM Datasheet
Download the complete datasheet for Onsemi FJD5304DTM to view detailed technical specifications.
No datasheet is available for this part.