PNP Epitaxial Silicon Transistor for surface mount applications. Features a maximum collector current of 2A and a collector-emitter voltage of 35V. Offers a minimum DC current gain (hFE) of -100 and a maximum power dissipation of 1.56W. Operates within a temperature range of -55°C to 150°C. Packaged in tape and reel for efficient assembly.
Onsemi FJMA790 technical specifications.
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | -450mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 450mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 0.75mm |
| hFE Min | -100 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 2A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -35V |
| Weight | 0.03g |
| Width | 2mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJMA790 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.