NPN Epitaxial Silicon Transistor, TO-92-3 package, suitable for through-hole mounting. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and 50V Collector Base Voltage (VCBO). Offers a continuous collector current of 100mA and a maximum power dissipation of 300mW. Operates across a wide temperature range from -55°C to 150°C with a transition frequency of 250MHz. Supplied in an Ammo Pack with 2000 units per package, this component is lead-free and RoHS compliant.
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi FJN3301RTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJN3301RTA Datasheet
Download the complete datasheet for Onsemi FJN3301RTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
