NPN Epitaxial Silicon Transistor featuring a 50V Collector-Emitter Voltage (VCEO) and 100mA Continuous Collector Current. This through-hole component offers a 300mV Collector-Emitter Saturation Voltage and a 250MHz Transition Frequency. Packaged in TO-92-3, it operates within a temperature range of -55°C to 150°C and supports 300mW power dissipation. RoHS compliant and lead-free, it is supplied in an ammo pack with a minimum hFE of 30.
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJN3302RTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.78mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.24g |
| Width | 0.98mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJN3302RTA Datasheet
Download the complete datasheet for Onsemi FJN3302RTA to view detailed technical specifications.
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