NPN bipolar junction transistor in a TO-92 package, featuring a 400V collector-emitter breakdown voltage and a maximum collector current of 1.5A. This through-hole component offers a transition frequency of 4MHz and a minimum hFE of 14. It operates across a wide temperature range from -65°C to 150°C and has a power dissipation of 1.1W. RoHS compliant and lead-free.
Frequency4MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi FJN3303BU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 14 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.1W |
| RoHS Compliant | Yes |
| Series | FJN3303 |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 50V |
| Weight | 0.006314oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJN3303BU Datasheet
Download the complete datasheet for Onsemi FJN3303BU to view detailed technical specifications.
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