NPN Epitaxial Silicon Transistor with integrated bias resistor, suitable for through-hole mounting in a TO-92-3 package. Features a 50V collector-emitter voltage (VCEO) and a 100mA continuous collector current. Offers a minimum DC current gain (hFE) of 56 and a transition frequency of 250MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 300mW. This RoHS compliant component is supplied in an ammo pack.
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJN3303RTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 5.33mm |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJN3303RTA Datasheet
Download the complete datasheet for Onsemi FJN3303RTA to view detailed technical specifications.
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