ONSEMI

FJP13007H1

Datasheet

Onsemi

FJP13007H1

Name: FJP13007H1 Onsemi
Brand: Onsemi
SKU: FJP13007H1

NPN BJT 400V 8A TO-220 Transistor

NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 400V Collector-Emitter Voltage (VCEO) and a 700V Collector Base Voltage (VCBO). Offers a maximum collector current of 8A with a power dissipation of 80W. Operates with a transition frequency of 4MHz and a minimum hFE of 15. This RoHS compliant component is lead-free and suitable for operation between -65°C and 150°C.

Frequency4MHz

PackageTO-220-3

Current Rating8A

MountingThrough Hole

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Technical Specifications

Onsemi FJP13007H1 technical specifications.

General

Package/Case	TO-220-3
Collector Base Voltage (VCBO)	700V
Collector Emitter Breakdown Voltage	400V
Collector Emitter Saturation Voltage	1V
Collector Emitter Voltage (VCEO)	400V
Collector-emitter Voltage-Max	3V
Current Rating	8A
Emitter Base Voltage (VEBO)	9V
Frequency	4MHz
Gain Bandwidth Product	4MHz
hFE Min	15
Lead Free	Lead Free
Max Collector Current	8A
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	80W
Mount	Through Hole
Number of Elements	1
Packaging	Rail/Tube
Polarity	NPN
Power Dissipation	80W
RoHS Compliant	Yes
Transition Frequency	4MHz
DC Rated Voltage	400V