NPN bipolar junction transistor in TO-220-3 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and 8A continuous collector current. Offers a maximum power dissipation of 80W and a transition frequency of 4MHz. Operates within a temperature range of -65°C to 150°C, with a collector-emitter saturation voltage of 1V. This RoHS compliant component is lead-free.
Frequency4MHz
PackageTO-220-3
Current Rating8A
MountingThrough Hole
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Technical Specifications
Onsemi FJP13007H2 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 26 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP13007H2 Datasheet
Download the complete datasheet for Onsemi FJP13007H2 to view detailed technical specifications.
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