NPN Single Bipolar Junction Transistor (BJT) in a TO-220 package for through-hole mounting. Features a 400V Collector-Emitter Breakdown Voltage, 12A Max Collector Current, and 100W Max Power Dissipation. Operates with a 4MHz transition frequency and offers a minimum hFE of 6. This RoHS compliant component is lead-free and designed for a wide operating temperature range from -65°C to 150°C.
Frequency4MHz
PackageTO-220
Current Rating12A
MountingThrough Hole
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Technical Specifications
Onsemi FJP13009 technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP13009 Datasheet
Download the complete datasheet for Onsemi FJP13009 to view detailed technical specifications.
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