NPN Bipolar Junction Transistor (BJT) for power applications, featuring a TO-220 package with through-hole mounting. This device offers a Collector Emitter Breakdown Voltage of 800V and a Collector Base Voltage of 1.1kV, with a maximum collector current of 5A. It operates within a temperature range of -55°C to 125°C and boasts a maximum power dissipation of 120W. Key electrical characteristics include a minimum hFE of 20 and a transition frequency of 15MHz.
PackageTO-220
MountingThrough Hole
PolarityNPN
Power120W
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Technical Specifications
Onsemi FJP2145TU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 1.1kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 151mV |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 15MHz |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| hFE Min | 20 |
| Length | 10.67mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | ESBC™ |
| Transition Frequency | 15MHz |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP2145TU Datasheet
Download the complete datasheet for Onsemi FJP2145TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.