NPN Silicon Transistor, ESBC™ series, designed for through-hole mounting in a TO-220-3 package. Features a high Collector Base Voltage (VCBO) of 1.6kV and Collector Emitter Breakdown Voltage of 800V. Offers a maximum collector current of 2A and a maximum power dissipation of 100W. Operates within a temperature range of -55°C to 125°C, with a minimum hFE of 20 and a transition frequency of 5MHz. This component is lead-free and RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJP2160DTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.6kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector-emitter Voltage-Max | 750mV |
| Emitter Base Voltage (VEBO) | 12V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.95mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | ESBC™ |
| Transition Frequency | 5MHz |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP2160DTU Datasheet
Download the complete datasheet for Onsemi FJP2160DTU to view detailed technical specifications.
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