NPN bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a 500V collector-emitter breakdown voltage and a 5A continuous collector current rating. Offers a maximum power dissipation of 50W and a transition frequency of 18MHz. Operates across a temperature range of -55°C to 150°C, with a minimum DC current gain (hFE) of 15. This component is lead-free and RoHS compliant.
Frequency18MHz
PackageTO-220-3
Current Rating5A
MountingThrough Hole
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Technical Specifications
Onsemi FJP5021OTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 18MHz |
| Gain Bandwidth Product | 18MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Transition Frequency | 18MHz |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP5021OTU Datasheet
Download the complete datasheet for Onsemi FJP5021OTU to view detailed technical specifications.
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