NPN Epitaxial Silicon Transistor designed for through-hole mounting in a TO-220 package. Features a maximum collector current of 17A and a maximum power dissipation of 100W. Offers a collector-emitter breakdown voltage of 250V and a transition frequency of 30MHz. Operates within a temperature range of -50°C to 150°C and is RoHS compliant.
Frequency30MHz
PackageTO-220
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJP5200RTU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FJP5200 |
| Transition Frequency | 30MHz |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP5200RTU Datasheet
Download the complete datasheet for Onsemi FJP5200RTU to view detailed technical specifications.
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